ADVANCED LOW k CAP FILM FORMATION PROCESS FOR NANO ELECTRONIC DEVICES
AssigneesGlobalfoundries Inc., International Business Machines Corporation
InventorsAlfred Grill, Joshua L. Herman, Son Nguyen, E. Todd Ryan, Hosadurga K. Shobha
Life of this patent
Estimating the term…
Abstract
A method of forming a carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. The dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen.
Claims20
A method of forming a dielectric film comprising:
- providing at least a carbon-rich carbosilane precursor into a reactor chamber;
- and
- depositing a dielectric film comprising atoms of at least Si, C and H having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a surface of a substrate, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C.
A method of forming a dielectric film comprising:
- providing at least a carbon-rich carbosilane precursor into a reactor chamber, said carbon-rich carbosilane precursor includes a 3:1 or greater ratio of C to Si atoms;
- depositing a dielectric film comprising atoms of at least Si, C and H having a dielectric constant of less than, or equal to, about 4.5 from the carbon-rich carbosilane precursor onto a Cu surface, said dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C;
- and
- performing a post deposition treatment on said dielectric film, wherein after said post deposition treatment said dielectric film remains compressively stressed.
Dependencies are inferred from the claim text.