Surface treatment method for semiconductor device

A surface treatment method for a semiconductor device, comprising:

• providing a substrate where a plurality of patterns are formed in a mold insulation layer;
• removing the mold insulation layer by using a wet etch solution;
• rinsing the substrate from which the mold insulation layer is removed with deionized water;
• forming a hydrophobic coating layer on a surface of each of the plurality of patterns;
• rinsing the substrate where the hydrophobic coating layer is formed with deionized water;
• and
• drying the substrate,
• wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.

A surface treatment method for a semiconductor device, comprising:

• providing a substrate where a plurality of patterns are formed in a mold insulation layer;
• removing the mold insulation layer by using a wet etch solution;
• rinsing the substrate from which the mold insulation layer is removed with deionized water;
• treating the substrate with an SC-1 (NHOH+HO+OH) solution;
• rinsing the treated substrate with deionized water;
• forming a hydrophobic coating layer on a surface of each of plurality of the patterns;
• rinsing the substrate where the hydrophobic coating layer is formed with deionized water;
• and
• drying the substrate,
• wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.