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US 2014/0179113 A1Published application
Surface Treatment Methods and Systems for Substrate Processing
AssigneeIntermolecular, Inc.
InventorsChi-I Lang, Sandip Niyogi
Life of this patent
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Abstract
Embodiments provided herein describe methods and systems for processing substrates. A plasma including radical species and charged species is generated. The charged species of the plasma are collected. A substrate is exposed to the radical species of the plasma. A layer is formed on the substrate after exposing the substrate to the radical species.
Claims20
A method for processing a substrate in a chamber, the method comprising:
- generating a plasma in the chamber, wherein the plasma comprises radical species and charged species and the plasma species is based on one of hydrogen, nitrogen, argon, oxygen, ammonia, helium, or a combination thereof;
- collecting the charged species;
- providing the radical species to the substrate, wherein a film feedstock is not provided to the substrate during the providing of the radical species to the substrate;
- and
- after the providing, depositing a layer on the substrate.
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A method for processing a substrate in a chamber, the method comprising:
- generating a plasma in the chamber, the plasma comprising radical species and charged species and the plasma species is based on one of hydrogen, nitrogen, argon, oxygen, ammonia, helium, or a combination thereof;
- flowing the plasma through a showerhead;
- controlling a charge on the showerhead during the flowing of the plasma therethrough to collect at least some of the charged species;
- providing the radical species to the substrate, wherein a film feedstock is not provided to the substrate during the providing of the radical species to the substrate;
- and
- after the providing, depositing a layer on the substrate.
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A method for processing a substrate in a chamber, the method comprising:
- generating a first plasma in the chamber, the first plasma comprising a first radical species and a first charged species;
- collecting the first charged species;
- providing the first radical species to the substrate;
- generating a second plasma in the chamber, the second plasma comprising a second radical species and a second charged species;
- collecting the second charged species;
- providing the second radical species to the substrate;
- and
- after the providing the second radical, depositing a layer on the substrate,
- wherein the providing the first radical species and providing the second radical species jointly comprise:
- sequentially providing the first radical species to a first site-isolated region on the substrate and providing the second radical species to the first site-isolated region on the substrate under a first set of processing conditions;
- and
- sequentially providing the first radical species to a second site-isolated region on the substrate and providing the second radical species to the second site-isolated region on the substrate under a second set of processing conditions.
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Dependencies are inferred from the claim text.