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AssigneeLam Research Corporation
InventorsQinghua ZHONG, Yifeng ZHOU, Ming-Shu KUO, Armen KIRAKOSIAN, Siyi LI, Srikanth RAGHAVAN, Ramkumar VINNAKOTA, Yoshie KIMURA, Tae Won KIM, Gowri KAMARTHY
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A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer is provided. The substrate is placed in a plasma processing chamber. The oxide layer is etched through the patterned organic mask, wherein metal residue from the metal containing layer forms metal residue on sidewalls of the oxide layer. The patterned organic mask is stripped. The metal residue is cleaned by the steps comprising providing a cleaning gas comprising BCl3 and forming a plasma from the cleaning gas. The substrate is removed from the plasma processing chamber.
A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer, comprising:
A method for forming devices in an oxide layer over a substrate, wherein a metal containing layer forms at least either an etch stop layer below the oxide layer or a patterned mask above the oxide layer, wherein a patterned organic mask is above the oxide layer, comprising:
Dependencies are inferred from the claim text.