Semiconductor device with air gaps and method for fabricating the same
AssigneeSK hynix Inc.
InventorsYong-Soo JOUNG, Hyung-Kyun KIM, Jae-Soo KIM, Dong-Gun HWANG, Kyoung YOO
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Abstract
A method for fabricating a semiconductor device includes forming a plurality of bit line structures over a substrate, forming contact holes between the bit line structures, forming sacrificial spacers on sidewalls of the contact holes, forming first plugs recessed inside the contact holes, forming air gaps by removing the sacrificial spacers, forming conductive capping layers capping the first plugs and the air gaps, and forming second plugs over the conductive capping layers.
Claims15
A method for fabricating a semiconductor device, comprising:
- forming a plurality of bit line structures over a substrate;
- forming contact holes between the bit line structures;
- forming sacrificial spacers on sidewalls of the contact holes;
- forming first plugs recessed inside the contact holes;
- forming air gaps by removing the sacrificial spacers;
- forming conductive capping layers on the first plugs and the air gaps to cover the first plugs and the air gaps;
- and
- forming second plugs over the conductive capping layers,
- wherein the conductive capping layers are formed directly from surfaces of the first plugs through an epitaxial growth process.
(canceled)
A method for fabricating a semiconductor device, comprising:
- forming a plurality of bit line structures over a substrate;
- forming contact holes between the bit line structures;
- forming sacrificial spacers on sidewalls of the bit line structures;
- forming first plugs recessed inside the contact holes;
- forming air gaps by removing the sacrificial spacers;
- forming protective layers on sidewalls of the first plugs;
- forming conductive capping layers capping the first plugs and the air gaps;
- and
- forming second plugs over the conductive capping layers.
A method for fabricating a semiconductor device, comprising:
- forming a plurality of bit line structures over a substrate;
- forming first plugs between the bit line structures;
- forming air gaps between the bit line structures and the first plugs;
- forming conductive capping layers on the first plugs and the air gaps, wherein the conductive capping layers cover the first plugs and the air gaps;
- and
- forming second plugs over the conductive capping layers,
- wherein the first plugs include polysilicon layers, and the conductive capping layers are formed directly from surfaces of the first plugs by performing a selective epitaxial growth process on silicon.
(canceled)
Dependencies are inferred from the claim text.