Semiconductor device with air gap and method for fabricating the same
AssigneeSK hynix Inc.
InventorsNam-Yeal LEE, Seung-Jin YEOM, Sung-Won LIM, Seung-Hee HONG, Hyo-Seok LEE
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Abstract
A method for fabricating a semiconductor device includes forming a semiconductor structure having an open portion over a substrate, forming a sacrificial spacer on sidewalls of the open portion, forming a recessed first plug in the open portion, forming an air gap by removing the sacrificial spacer, forming a capping layer to expose the top surface of the recessed first plug and to cap the air gap, forming a protective layer over the capping layer and the recessed first plug, forming an ohmic contact layer over the protective layer, and forming a second plug over the ohmic contact layer.
Claims18
A method for fabricating a semiconductor device, comprising:
- forming a semiconductor structure having an open portion over a substrate;
- forming a sacrificial spacer on a sidewall of the open portion;
- forming a first plug in the open portion;
- removing the sacrificial spacer to form an air gap;
- forming a capping layer to expose a top surface of the first plug and to cap the air gap;
- forming a protective layer over the capping layer and the first plug;
- forming an ohmic contact layer over the protective layer;
- and
- forming a second plug over the ohmic contact layer.
A method for fabricating a semiconductor device, comprising:
- forming a plurality of bit line structures over a substrate;
- forming a storage node contact hole between the bit line structures;
- forming a sacrificial spacer on sidewall of the storage node contact hole;
- forming a first storage node contact plug in the storage node contact hole;
- removing the sacrificial spacer to form an air gap;
- forming oxide by oxidizing the surface of the first storage node contact plug;
- etching the oxide to expose a top surface of the first storage node contact plug, and to form a capping layer to cap the air gap;
- forming a protective layer over the capping layer and the recessed first storage node contact plug;
- forming an ohmic contact layer over the protective layer;
- and
- forming a second storage node contact plug over the ohmic contact layer.
A method for fabricating a semiconductor device, comprising:
- forming a semiconductor structure having an open portion exposing a portion of a substrate;
- forming a sacrificial spacer on a sidewall of the semiconductor structure;
- forming a first plug in the open portion;
- removing the sacrificial spacer to form an air gap between the first plug and the sidewall of the open portion;
- forming a capping layer to expose a top surface of the first plug and to cap the air gap;
- forming a protective layer over the capping layer and the first plug;
- and
- forming a second plug over the protective layer.
Dependencies are inferred from the claim text.