Method to Control Depth Profiles of Dopants Using a Remote Plasma Source
AssigneeIntermolecular, Inc.
InventorsSandip Niyogi, Amol Joshi, Chi-I Lang, Salil Mujumdar
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Abstract
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.
Claims16
A method for doping a layer, the method comprising:
- depositing the layer on a substrate;
- generating ions or reactive species of a first gas using a remote plasma source;
- providing the ions or reactive species of the first gas to the layer, thereby treating a surface of the layer;
- generating ions or reactive species of a dopant using a remote plasma source;
- providing the ions or reactive species of the dopant to the layer, thereby incorporating the dopant into the dielectric layer;
- wherein a gas used to generate the ions or reactive species of the first gas comprises at least one of H2, O2, N2, N2O, or NH3;
- and
- wherein a gas used to generate the ions or reactive species of the dopant comprises at least one of H2, O2, N2, N2O, NH3, BCl3, or NF3.
A method for doping a layer, the method comprising:
- depositing the layer on a substrate;
- generating ions or reactive species of a first dopant using a remote plasma source;
- providing the ions or reactive species of the first dopant to the layer, thereby incorporating the first dopant into the layer;
- generating ions or reactive species of a second dopant using a remote plasma source;
- providing the ions or reactive species of the second dopant to the layer, thereby incorporating the second dopant into the layer;
- wherein a gas used to generate the ions or reactive species of the first dopant comprises at least one of H2, O2, N2, N2O, NH3, BCl3, or NF3;
- and
- wherein a gas used to generate the ions or reactive species of the first dopant comprises at least one of H2, O2, N2, N2O, NH3, BCl3, or NF3.
A method for processing a metal, the method comprising:
- a) depositing the metal on a substrate;
- b) generating ions or reactive species of a first gas using a remote plasma source;
- c) providing the ions or reactive species of the first gas to the metal, thereby forming a compound formed from the metal and the ions or reactive species;
- and
- d) wherein the first gas comprises at least one of H2, O2, N2, N2O, NH3, BCl3, or NF3.
Dependencies are inferred from the claim text.