Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming over a semiconductor substrate a first interconnection layer including a first electrode pattern and a second electrode pattern extended in a first direction;
• forming an insulating film over the semiconductor substrate with the first interconnection layer formed;
• forming in the insulating film a first via-hole down to the first electrode pattern and a second via-hole down to the second electrode pattern;
• forming in a surface side of the insulating film a first interconnection trench position above the first electrode pattern, connected to the first via-hole and extended in the first direction, and a second interconnection trench position above the second electrode pattern, connect to the second via-hole and extended in the first direction;
• and
• burying in the first via-hole, the second via-hole, the first interconnection trench and the second interconnection trench a conductive film to form a second interconnection layer including a third electrode pattern electrically connected to the first electrode pattern via the first via-hole and a fourth electrode pattern electrically connected to the second electrode pattern via the second via-hole,
• in forming the first via-hole and the second via-hole, the first via-hole being laid out, offset from a center of the first electrode pattern in a second direction intersecting the first direction, and the second via-hole being laid out, offset from a center of the second electrode pattern in the second direction.