Methods and Systems for Controlling Gate Dielectric Interfaces of MOSFETs
AssigneeIntermolecular, Inc.
InventorsSandip Niyogi, Sean Barstow, Chi-I Lang
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Abstract
Embodiments provided herein describe methods and systems for forming gate dielectrics for field effect transistors. A substrate including a germanium channel and a germanium oxide layer on a surface of the germanium channel is provided. A metallic layer is deposited on the germanium oxide layer. The metallic layer may be nanocrystalline or amorphous. The deposition of the metallic layer causes the germanium oxide layer to be reduced such that a metal oxide layer is formed adjacent to the germanium channel.
Claims20
A method for forming a gate dielectric for a field effect transistor, the method comprising:
- providing a substrate comprising a germanium channel and a germanium oxide layer on a surface of the germanium channel;
- and
- depositing a metallic layer on the germanium oxide layer, the metallic layer causing the germanium oxide layer to be reduced such that a metal oxide layer is formed adjacent to the germanium channel.
A method for forming a gate dielectric for a field effect transistor, the method comprising:
- providing a substrate comprising a germanium channel and a germanium oxide layer on a surface of the germanium channel, the germanium oxide layer having a first thickness;
- and
- depositing a metallic layer having a second thickness on the germanium oxide layer, the second thickness being greater than the first thickness, the metallic layer causing the germanium oxide layer to be reduced such that a metal oxide layer is formed adjacent to the germanium channel, wherein the metal oxide layer does not comprise germanium.
A method for forming a gate dielectric for a metal-oxide-semiconductor field effect transistor, the method comprising:
- providing a substrate comprising a germanium channel and a germanium oxide layer on a surface of the germanium channel;
- depositing an aluminum layer on the germanium oxide layer, the deposition of the aluminum layer causing the germanium oxide layer to be reduced such that an aluminum oxide layer is formed adjacent to the germanium channel;
- forming a gate dielectric layer over the metal oxide layer;
- and
- forming a gate metal layer over the gate dielectric layer.
Dependencies are inferred from the claim text.