Method for forming void-free polysilicon and method for fabricating semiconductor device using the same
AssigneeSK hynix Inc.
InventorHyung-Kyun KIM
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a buried gate electrode in a semiconductor substrate. An insulating layer is formed over the buried gate electrode and is etched to form a contact hole exposing the semiconductor substrate. A sacrificial spacer is formed on sidewalls of the insulating layer defining the contact hole. A polysilicon layer pattern is formed in the contact hole. The sacrificial spacer is removed to form an air gap around the polysilicon layer pattern. A thermal process is performed to remove a seam existing in the polysilicon layer pattern.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a second layer over a first layer;
- forming an open portion by etching the second layer forming a sacrificial layer on sidewalls of the second layer defining the open portion;
- forming a polysilicon layer pattern in the open portion;
- removing the sacrificial layer to exposed side ails of the polysilicon layer pattern;
- and
- performing a thermal process to remove a seam in the polysilicon layer pattern.
A method for fabricating a semiconductor device, the method comprising:
- forming a buried gate electrode in a semiconductor substrate;
- forming an insulating layer over the buried gate electrode;
- etching the insulating layer to form a contact hole exposing the semiconductor substrate;
- forming a sacrificial layer on sidewalls of the insulating layer defining the contact hole;
- forming a polysilicon layer pattern in the contact hole, removing the sacrificial spacer;
- and
- performing a thermal process to remove a seam in the polysilicon layer pattern.
A method for fabricating a semiconductor device, comprising:
- forming a plurality of bit line structures over a semiconductor substrate;
- forming a storage node contact hole between the plurality of bit line structures;
- forming a sacrificial spacer on side a Is of the bit line structures defining the storage node contact hole;
- forming a first contact plug in the storage node contact hole;
- removing the sacrificial spacer;
- performing a thermal process to remove a seam in the first contact plug;
- forming a capping spacer to cap the exposed sidewalls of the first contact plug;
- and
- forming a second contact plug over the first contact plug.
Dependencies are inferred from the claim text.