Process for Producing at Least One Silicon-Based Nanoelement in a Silicon Oxide Section and Process for the Manufacture of a Device Employing the Production Process

Abstract

The process for the production of at least one silicon-based nanoelement (4), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer (1) comprising electrically doped silicon; forming, on the first layer (1), a second layer (2) based on silicon oxide with carbon atoms (3) dispersed in the said second layer (2); and exposing the first and second layers (1, 2) to an oxidizing atmosphere, so as to oxidize at least a first section (1a) of the first layer (1) at the interface of the said first layer (1) with the second layer (2) and to form the said at least one nanoelement (4) at the said first section (1a).

Dependencies are inferred from the claim text.