Method for manufacturing semiconductor substrate
AssigneeElectronics and Telecommunications Research Institute
InventorsSung-Bum BAE, Sung Bock Kim, Jae Kyoung Mun, Eun Soo Nam
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Abstract
The inventive concept provides methods for manufacturing a semiconductor substrate. The method may include forming a stop pattern surrounding an edge of a substrate, forming a transition layer an entire top surface of the substrate except the stop pattern, and forming an epitaxial semiconductor layer on the transition layer and the stop pattern. The epitaxial semiconductor layer may not be grown from the stop pattern. That is, the epitaxial semiconductor layer may be isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer may gradually cover the stop pattern.
Claims20
A method for manufacturing a semiconductor substrate, the method comprising:
- forming a stop pattern surrounding an edge of a substrate;
- forming a transition layer an entire top surface of the substrate except the stop pattern;
- and
- forming an epitaxial semiconductor layer on the transition layer and the stop pattern,
- wherein the epitaxial semiconductor layer is not grown from the stop pattern;
- and
- wherein the epitaxial semiconductor layer is isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer gradually covers the stop pattern.
A method for manufacturing a semiconductor substrate, the method comprising:
- sequentially forming a stop layer and a transition layer on a substrate;
- patterning the transition layer to form a groove surrounding an edge of the substrate, the groove exposing the stop layer;
- and
- forming an epitaxial semiconductor layer on the transition layer and the stop layer,
- wherein the epitaxial semiconductor layer is not grown from the stop layer exposed by the groove;
- and
- wherein the epitaxial semiconductor layer is isotropically grown from a top surface and a sidewall of the transition layer by a selective isotropic growth method, so that the epitaxial semiconductor layer gradually covers the stop layer exposed by the groove.
Dependencies are inferred from the claim text.