Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium

A substrate processing apparatus comprising:

• a process chamber accommodating a substrate;
• a gas supply system configured to supply a gas into the process chamber;
• and
• a control unit configured to control the gas supply system to:
• form a seed layer containing a predetermined element and carbon on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle including alternately performing supplying a first source gas containing the predetermined element, an alkyl group and a halogen group to the substrate in the process chamber and supplying a second source gas containing the predetermined element and an amino group to the substrate in the process chamber, or by performing supplying the first source gas to the substrate in the process chamber a predetermined number of times;
• and form a film containing the predetermined element on the seed layer by supplying a third source gas containing the predetermined element and free of the alkyl group to the substrate in the process chamber.