Manufacturing method of lateral double diffused metal oxide semiconductor device

A manufacturing method of a lateral double diffused metal oxide semiconductor (LDMOS) device, comprising:

• providing a substrate;
• forming an epitaxial layer on the substrate;
• forming an oxide region mask on the epitaxial layer;
• forming a channel stop region having a first conductivity type and a top region having the first conductivity type in the epitaxial layer according to the oxide region mask;
• forming an isolation oxide region and a field oxide region above the channel stop region and top region according to the oxide region mask respectively;
• removing the oxide region mask;
• forming a well having the first conductivity type in the epitaxial layer;
• forming a gate on the epitaxial layer, wherein part of the gate is located on the field oxide region, and another part of the gate is located on the well;
• forming a lightly doped region having a second conductivity type in the well, wherein at least part of the lightly doped region is beneath the gate;
• and
• forming a source and a drain having the second conductivity type at different sides of the gate, in the well and in the epitaxial layer respectively, whereby when the LDMOS device is turned ON, a lateral current channel is formed between the source and the drain.