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US 2014/0179073 A1Published application
Semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorJong Un KIM
Life of this patent
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Abstract
A method of manufacturing a semiconductor device may include: forming active patterns of pillar-shapes upward protruding from a substrate, the active patterns fully doped with dopants of one conductivity type; forming a gate electrode extending in one direction, the gate electrode overlapped with sidewalls of the active patterns; and forming a gate insulating layer between the gate electrode and the active patterns.
Claims7
A method of manufacturing a semiconductor device, the method comprising:
- forming active patterns of pillar-shapes upward protruding from a substrate, the active patterns fully doped with dopants of one conductivity type;
- forming a gate electrode extending in one direction, the gate electrode overlapped with sidewalls of the active patterns;
- and
- forming a gate insulating layer between the gate electrode and the active patterns.
1 more element
Dependencies are inferred from the claim text.