US 2014/0179072 A1 · SEMICONDUCTOR DEVICE HAVING EPITAXIAL SEMICONDUCTOR LAYER ABOVE IMPURITY LAYER

Abstract

The semiconductor device includes a first transistor including a first impurity layer of a first conductivity type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, and a first gate electrode formed above the first gate insulating film, and a second transistor including a second impurity layer of the second conductivity type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and having a thickness different from that of the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer and having a film thickness equal to that of the first gate insulating film and a second gate electrode formed above the second gate insulating film.

Claims12

Dependent claims

A method of manufacturing a semiconductor device comprising:

forming a first impurity layer of a first conductivity type in a first region of a semiconductor substrate;
forming a second impurity layer of a second conductivity type in a second region of the semiconductor substrate;
epitaxially growing a semiconductor layer above the semiconductor substrate with the first impurity layer and the second impurity layer formed in;
forming above the semiconductor layer a mask covering the first region and exposing the second region;
removing a part of the semiconductor layer by using the mask to thin a thickness of the semiconductor layer in the second region;
removing the mask;
forming a first gate insulating film above the semiconductor layer in the first region and a second gate insulating film of a film thickness equal to a film thickness of the first gate insulating film above the semiconductor layer in the second region;
and
forming a first gate electrode and a second gate electrode respectively above the first gate insulating film and above the second gate insulating film.

6 more elements

A method of manufacturing a semiconductor device comprising:

forming a first impurity layer of a first conductivity type in a first region of a semiconductor substrate;
epitaxially growing a first semiconductor layer above the semiconductor substrate with the first impurity layer formed in;
forming a second impurity layer of a second conductivity type in a second region of the semiconductor substrate with the first semiconductor layer formed on;
epitaxially growing a second semiconductor layer above the semiconductor substrate with the first impurity layer, the second impurity layer and the first semiconductor layer formed;
forming a first gate insulating film above the second semiconductor layer in the first region and forming a second gate insulating film of a film thickness equal to a film thickness of the first gate insulating film above the second semiconductor layer in the second region;
and
forming a first gate electrode and a second gate electrode respectively above the first gate insulating film and above the second gate insulating film.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device having epitaxial semiconductor layer above impurity layer

Life of this patent

Semiconductor device having epitaxial semiconductor layer above impurity layer

Life of this patent

Abstract

Claims12