Method for producing photoelectric conversion element and method for producing imaging device
AssigneeFUJIFILM Corporation
InventorHideyuki SUZUKI
Life of this patent
Estimating the term…
Abstract
The method produces a photoelectric conversion element comprising a lower electrode, an electron blocking layer, a photoelectric conversion layer, an upper electrode, and a sealing layer which are laminated on one another in this order. The method includes a step of forming a transparent conductive oxide into a film at a deposition rate of 0.5 Å/s or higher by a sputtering method to form the upper electrode having a stress of −50 MPa to −500 MPa on the photoelectric conversion layer.
Claims7
A method for producing a photoelectric conversion element comprising a lower electrode, an electron blocking layer, a photoelectric conversion layer, an upper electrode, and a sealing layer which are laminated on one another in this order, the method having the steps of:
- preparing a substrate on which the lower electrode, the electron blocking layer and the photoelectric conversion layer are formed in this order;
- and
- forming a transparent conductive oxide into a film at a deposition rate of 0.5 Å/s or higher by a sputtering method to form the upper electrode having a stress of −50 MPa to −500 MPa on the photoelectric conversion layer.
Dependencies are inferred from the claim text.