Field Effect Transistor-Based Bio-Sensor
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Christopher P. D'Emic, Ashish Jagtiani, Sufi Zafar
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Abstract
An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.
Claims6
A method of forming a sensor, comprising:
- disposing a silicon sensing element on a substrate;
- depositing a gate dielectric layer on the silicon sensing element opposite the substrate, the gate dielectric layer forming a sensing surface on the silicon sensing element;
- depositing a passive surface on the substrate surrounding, adjacent to, or around the sensing surface, a material of the passive surface being different from a material of the sensing surface;
- and
- modifying the sensing surface opposite the substrate with a compound to receive a target species.
Dependencies are inferred from the claim text.