Method of manufacturing organic light emitting diode display

A method for manufacturing an organic light emitting diode (OLED) display, the method comprising:

• sequentially stacking an impurity-doped first amorphous silicon layer, a gate insulating layer, and an impurity-non-doped second amorphous silicon layer on a substrate;
• forming a first polysilicon layer and a second polysilicon layer by crystallizing the first and the second amorphous silicon layers, respectively;
• forming a first polysilicon layer pattern, a gate insulating layer pattern, and a second polysilicon layer pattern intermediate in the same pattern by patterning the first polysilicon layer, the gate insulating layer, and the second polysilicon layer;
• sequentially stacking an impurity-doped third amorphous silicon layer and a data metal layer on the second polysilicon layer pattern intermediate;
• forming a photosensitive film pattern with a plurality of thicknesses on the data metal layer;
• and
• forming a second polysilicon layer pattern, a third amorphous silicon layer pattern, and a data metal layer pattern by patterning the second polysilicon layer pattern intermediate, the third amorphous silicon layer, and the data metal layer through the photosensitive film pattern.