Method of processing a semiconductor structure
AssigneeKoninklijke Philips Electronics N.V.
InventorsJerome Chandra Bhat, Daniel Alexander Steigerwald, Michael David Camras, Han Ho Choi, Nathan Fredrick Gardner, Oleg Borisovich Shchekin
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Abstract
A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.
Claims19
A method comprising:
- providing a wafer comprising a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region;
- bonding the wafer to a second substrate, wherein the second substrate is transparent and comprises a wavelength converting material disposed in glass;
- removing the growth substrate;
- and
- after bonding the wafer to the second substrate, processing the wafer into multiple light emitting devices.
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Dependencies are inferred from the claim text.