Method for generating quantized anomalous hall effect

A method for generating quantum anomalous Hall effect, comprising:

• forming a topological insulator quantum well film in a range of 3QL thickness to 5QL thickness on an insulating substrate;
• doping the topological insulator quantum well film with a first element and a second element during the forming of the topological insulator quantum well film to form a magnetically doped topological insulator quantum well film, the doping of the topological insulator quantum well film with the first element and the second element respectively introducing hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm−2, one of the first element and the second element is a magnetically dopant to the topological insulator quantum well film;
• and
• applying an electric field to the magnetically doped topological insulator quantum well film.