Back to results
US 2014/0178701 A1Published application
Room temperature debonding composition, method and stack
AssigneesSumitomo Bakelite Co., Ltd., Promerus, LLC
InventorsVenkat DUKKIPATI, Kei KAWASAKI, Larry RHODES, Toshihiro SATO
Life of this patent
Estimating the term…
Abstract
Embodiments in accordance with the present invention provide for materials, methods for using such materials and structures that both incorporate such materials and are made using such methods that can be smoothly debonded at or near room temperature while providing a fixable bond that allows for wafer processing such as wafer thinning, anisotropic dry etching and chemical resistance during plating and etching.
Claims8
A debondable wafer stack, comprising:
- a support substrate;
- a semiconductor substrate;
- a thermally stable polymer layer comprising at least one of a styrene-hydrogenated isoprene-styrene polymer, a styrene-hydrogenated butadiene-styrene polymer, a styrene-hydrogenated isoprene/butadiene-styrene polymer or a polynorbornene polymer, where such styrene-hydrogenated polymers are at least 30 wt. % styrene and have a weight average molecular weight of less than 100,000 Dalton and where such polynorbomene polymer has a glass transition temperature of 300° C. or less;
- and
- a surface energy modifier material (SEMM) selected from octadecyltrichlorosilane, octadecyltrimethoxysilane, (2-dodecen-1-yl)succinic anhydride, a hydrogenated monohydroxy-terminated polybutadiene, or a polyether-modified polydimethylsiloxane;
- where such SEMM is applied to surface of at least one of the support substrate or the semiconductor substrate or a SEMM selected from octadecyltrichlorosilane, octadecyltrimethoxysilane, a hydrogenated monohydroxy-terminated polybutadiene, or a polyether-modified polydimethylsiloxane is added to one of the polymers;
- and
- wherein said surface energy modifier material is present at an amount greater than 2.5 parts per hundred parts of said thermally stable polymer.
5 more elements
A method of forming a debondable stack, comprising:
- providing a support substrate having a bonding surface;
- providing a semiconductor substrate having a device surface;
- applying a surface energy modifier selected from octadecyltrichlorosilane, octadecyltrimethoxysilane, (2-dodecen-1-yl)succinic anhydride, a hydrogenated monohydroxy-terminated polybutadiene, or a polyether-modified polydimethylsiloxane to one or both of the device surface and the bonding surface;
- forming a polymer layer on one or both of the bonding surface and the device surface;
- the polymer layer comprising one of a styrene-hydrogenated isoprene-styrene polymer, a styrene-hydrogenated butadiene-styrene polymer, a styrene-hydrogenated isoprene/butadiene-styrene polymer or a norbornene-type polymer, where such styrene-hydrogenated polymers are at least 30 wt. % styrene and have a weight average molecular weight of less than 100,000 Dalton and where such norbornene-type polymer has a glass transition temperature of 300° C. or less;
- and
- thermo-compressive bonding the support substrate to the semiconductor substrate where the polymer layer is disposed therebetween;
- and
- wherein said surface energy modifier material is present at an amount greater than 2.5 parts per hundred parts of said polymer.
6 more elements
A method of forming a debondable stack, comprising:
- providing a support substrate having a bonding surface;
- providing a semiconductor substrate having a device surface;
- forming a polymer layer on one or both of the bonding surface and the device surface;
- said polymer layer comprising a surface energy modifier material (SEMM) selected from octadecyltrichlorosilane, octadecyltrimethoxysilane, a hydrogenated monohydroxy-terminated polybutadiene, or a polyether-modified polydimethylsiloxane, one of a styrene-hydrogenated isoprene-styrene polymer, a styrene-hydrogenated butadiene-styrene polymer, a styrene-hydrogenated isoprene/butadiene-styrene polymer or a polynorbornene, where such styrene-hydrogenated polymers are at least 30 wt. % styrene and have a weight average molecular weight of less than 100,000 Dalton, such polynorbornene has a glass transition temperature of 300° C. or less and with the proviso that when the polymer is a polynorbornene, the surface energy modifier is not a polyether modified polydimethylsiloxane;
- thermo-compressive bonding the support substrate to the semiconductor substrate where the polymer layer is disposed therebetween;
- and
- wherein said surface energy modifier material is present at an amount greater than 2.5 parts per hundred parts of said polymer.
4 more elements
A debondable wafer stack, comprising:
- a carrier substrate;
- a semiconductor substrate;
- a first polymer layer room temperature releasably coupled to the carrier substrate, said first polymer layer comprising a blend of styrene-hydrogenated isoprene-styrene block copolymer and one or more of styrene-hydrogenated butadiene-styrene polymers;
- a second polymer layer fixably coupled to the semiconductor substrate, said second polymer layer comprising a blend of styrene-hydrogenated isoprene-styrene block copolymer and one or more of styrene-hydrogenated butadiene-styrene polymers, where said first and second polymer layers are coupled to form said debondable wafer stack.
1 more element
Dependencies are inferred from the claim text.