Bernal-stacked graphene layers and methods of making the same

Abstract

In some embodiments, the present disclosure pertains to methods of controllably forming Bernal-stacked graphene layers. In some embodiments, the methods comprise: (1) cleaning a surface of a catalyst; (2) annealing the surface of the catalyst; (3) applying a carbon source onto the cleaned and annealed surface of the catalyst in a reaction chamber; and (4) growing the Bernal-stacked graphene layers on the surface of the catalyst in the reaction chamber, where the number of formed Bernal-stacked graphene layers is controllable as a function of one or more growth parameters. Further embodiments of the present disclosure also include steps of: (5) terminating the growing step; and (6) transferring the formed Bernal-stacked graphene layers from the surface of the catalyst onto a substrate. Further embodiments of the present disclosure pertain to graphene films formed by the methods of the present disclosure.

Dependencies are inferred from the claim text.