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US 2014/0178674 A1Published application
Topological insulator structure
AssigneesInstitute of Physics, Chinese Academy of Sciences, Tsinghua University
InventorsQI-KUN XUE, KE HE, XU-CUN MA, XI CHEN, LI-LI WANG, CUI-ZU CHANG, XIAO FENG, YAO-YI LI, JIN-FENG JIA
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Abstract
A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1. The magnetically doped TI quantum well film is in 3 QL to 5 QL.
Claims8
A topological insulator structure, comprising:
- an insulating substrate;
- and
- a magnetically doped TI quantum well film located on the insulating substrate;
- wherein a material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3, 0.05<x<0.3, 0<y<0.3, and 1:2<x:y<2:1;
- and the magnetically doped TI quantum well film is in a range of 3 QL thickness to 5 QL thickness.
2 more elements
Dependencies are inferred from the claim text.