Method for recycling a substrate holder
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsFrank FOURNEL, Hubert MORICEAU, Marc ZUSSY
Life of this patent
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Abstract
A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate.
Claims13
A method for recycling a substrate holder of which one surface, called the receiving surface, is adapted for receiving a substrate designed for at least one deposition step of a layer of a material on said substrate, the deposition step also leading to the deposition of a layer of a material on said substrate holder, the method comprising the steps of:
- a) Implanting ion species through the receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder;
- b) Exfoliating the thin film from the substrate holder so as to break up the thin film;
- and
- c) Removing a stack comprising at least the layer of a material deposited on the thin film resulting from said at least one deposition step of the layer of a material on the substrate.
A method for recycling a substrate holder of which one surface, called the receiving surface, is adapted for receiving a substrate designed for at least one deposition step of a layer of a material on said substrate, the deposition step also leading to the deposition of a layer of a material on said substrate holder, the method comprising the steps of:
- a) Implanting ion species through the receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder;
- b) depositing a surface layer on the thin film and on the stack of at least the layer of a material deposited on the thin film and exfoliating the thin film from the substrate holder so as to break up the thin film;
- and
- c) Removing a stack comprising at least the layer of a material deposited on the thin film resulting from said at least one deposition step of the layer of a material on the substrate,
- the surface layer having a different CTE from the CTE of the material of the substrate holder.
A method for recycling a substrate holder of which one surface, called the receiving surface, is adapted for receiving a substrate designed for at least one deposition step of a layer of a material on said substrate, the deposition step also leading to the deposition of a layer of a material on said substrate holder, the method comprising the steps of:
- a) Implanting ion species through the receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder;
- b) Exfoliating the thin film from the substrate holder so as to break up the thin film;
- and
- c) Removing a stack comprising at least the layer of a material deposited on the thin film resulting from said at least one deposition step of the layer of a material on the substrate,
- the receiving surface of the substrate holder comprising a main planar region allowing the receiving of a substrate and a peripheral region having an excess thickness of material adapted to hold the substrate in position for the depositing of a layer of a material, and the implantation step a) comprising the implanting of ion species through the main planar region and through the peripheral region of the receiving surface leading to the formation of a first buried weakened plane underneath the main planar region and the formation of a second buried weakened plane underneath the peripheral region, the accumulation of the first buried weakened plane and of the second buried weakened plane delimiting the thin film.
Dependencies are inferred from the claim text.