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US 2014/0178285 A1Published application
Method of fabricating silicon carbide
AssigneeLG Innotek Co., Ltd.
InventorsJung Eun Han, Byung Sook Kim
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Abstract
A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.
Claims11
A method of fabricating silicon carbide, the method comprising:
- preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound;
- and
- reacting the mixture,
- wherein the preparing of the mixture is achieved by spray-coating the carbon source on the dry silicon source,
- wherein a viscosity of the carbon source is in a range of about 20 cps to about 1000 cps.
2 more elements
(canceled)
Dependencies are inferred from the claim text.