Method for producing higher silanes with improved yield
AssigneeEvonik Degussa GmbH
InventorsJürgen Erwin Lang, Hartwing Rauleder, Ekkehard Mueh
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Abstract
The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI4 or GeCI4, a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns-1 to 1 kV ns-1 and a pulse width b of 500 ns to 100 μs, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.
Claims16
Process A process for preparing hexachlorodisilane or Ge2Cl6,
- the process comprising:
- in a gas comprising SiCl4 or GeCl4,
- a) activating a nonthermal plasma is generated in a reactor via an AC voltage of frequency f, and injecting into the plasma at least one electromagnetic pulse with
- repetition rate g,
- a voltage component having an edge slope in a rising edge of from 10 V ns−1 to 1 kV ns−1, and
- a pulsewidth b of from 500 ns to 100 μs,
- thereby obtaining a liquid phase, and
- b) obtaining pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase.
Dependencies are inferred from the claim text.