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US 2014/0177370 A1Published application
Method, apparatus and system for responding to a row hammer event
AssigneeIntel Corporation
InventorsJohn B. Halbert, Kuljit S. Bains
Life of this patent
Estimating the term…
Abstract
Techniques and mechanisms to facilitate an operational mode of a memory device to prepare for a targeted refresh of a row in memory. In an embodiment, the memory device performs one or more operations while in the mode to prepare for a future command from a memory controller, the command to implement, at least in part, a targeted refresh of a row in a first bank of the memory device. Prior to such a command, the memory device services another command from the memory controller. In another embodiment, servicing the other command includes the memory device accessing a second bank of the memory device while the memory device operates in the mode, and before completion of an expected future targeted row refresh.
Claims28
A memory device comprising:
- a first bank including a first row and a second row physically adjacent to the first row;
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- detect logic to configure the memory device for operation in a first mode in response to an indication that repeated access to the first row exceeds a threshold;
- row hammer response logic to operate based on the first mode, including the row hammer response logic to perform, in response to the indication, one or more operations in preparation for a targeted refresh of the second row;
- and
- access logic to service a first command from a memory controller after performance of the one or more operations, including the access logic to access the second bank while the memory device is configured for operation in the first mode, the access logic further to perform the targeted refresh of the second row in response to a second command received by the memory device from the memory controller after the first command.
3 more elements
A method at a memory device, the method comprising:
- configuring the memory device for operation in a first mode in response to an indication that repeated access to a first row exceeds a threshold, wherein the memory device comprises:
- a first bank including the first row and a second row physically adjacent to the first row;
- and
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- based on the first mode, performing in response to the indication one or more operations in preparation for a targeted refresh of the second row;
- servicing a first command from a memory controller after performance of the one or more operations, including accessing the second bank while the memory device is configured for operation in the first mode;
- and
- performing the targeted refresh of the second row in response to a second command received by the memory device from the memory controller after the first command.
5 more elements
A memory controller comprising:
- detect logic to receive an indication that repeated access to a first row of a memory device exceeds a threshold, wherein the memory device comprises:
- a first bank including the first row and a second row physically adjacent to the first row;
- and
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- command logic to configure the memory device for operation in a first mode in response to the indication, wherein based on the first mode, the memory device performs one or more operations in preparation for a targeted refresh of the second row, the command logic further to send a first command, wherein the memory device accesses the second bank to service the first command after performance of the one or more operations and while the memory device is configured for operation in the first mode, the command logic further to send a second command to the memory device after the first command is sent, wherein the memory device performs the targeted refresh of the second row in response to the second command.
2 more elements
A method at a memory controller, the method comprising:
- receiving an indication that repeated access to a first row of a memory device exceeds a threshold, wherein the memory device comprises:
- a first bank including the first row and a second row physically adjacent to the first row;
- and
- a second bank, wherein an integrated circuit chip of the memory device includes the first bank and the second bank;
- configuring the memory device for operation in a first mode in response to the indication, wherein based on the first mode, the memory device performs one or more operations in preparation for a targeted refresh of the second row;
- sending a first command, wherein the memory device accesses the second bank to service the first command after performance of the one or more operations and while the memory device is configured for operation in the first mode;
- and
- sending a second command to the memory device after the first command is sent, wherein the memory device performs the targeted refresh of the second row in response to the second command.
5 more elements
Dependencies are inferred from the claim text.