Programmable resistance-modulated write assist for a memory device

A method of operating a semiconductor memory, comprising:

• initiate a write process for a static random access memory (SRAM) circuit;
• program a variable resistance circuit to a resistance value related to a supply voltage of the SRAM circuit;
• output a resistance-modulated write assist signal;
• and
• employ the resistance-modulated write assist signal to discharge the supply voltage to ground by a discharge amount related to the resistance value.

A memory circuit, comprising:

• a voltage source that generates a supply voltage having a magnitude configured to facilitate data retention for a state random access memory (SRAM);
• a write assist circuit that partially discharges the supply voltage to ground, lowering the magnitude of the supply voltage at a supply node of the SRAM;
• a programmable control circuit that outputs a resistance-modulated signal to control activation of the write assist circuit, the resistance-modulated signal having a signal characteristic that at least in part controls a discharge magnitude by which the magnitude of the supply voltage at the supply node is lowered by the write assist circuit;
• and
• a modulation circuit that mitigates lowering of the magnitude of the supply voltage at the supply node beyond the discharge magnitude.