Semiconductor device

A voltage step-down circuit, comprising:

• a first transistor having a first end connected to an internal voltage terminal and a second end connected to a first node;
• a first resistor connected between the first node and a monitor node;
• a first resistance adjustment unit connected in parallel with the first resistor, the first resistance adjustment unit including a second resistor and a first switch connected in series;
• a third resistor connected between the monitor node and a second node;
• a second resistance adjustment unit connected in parallel with the third resistor, the second resistance adjustment unit including a fourth resistor and a second switch connected in series;
• a first comparator having an output terminal connected to a gate electrode of the first transistor and configured to compare a voltage of the monitor node to a reference voltage and output a control line voltage according to the comparison;
• and
• a resistance control circuit configured to control a conductance of the first switch and a conductance of the second switch on the basis of an operation initiation signal.

A semiconductor memory device, comprising:

• a first transistor having a first end connected to an internal voltage terminal and a second end connected to a first node;
• a first resistor connected between the first node and a monitor node;
• a first resistance adjustment unit connected in parallel with the first resistor, the first resistance adjustment unit including a second resistor, a first switch, and a fifth resistor connected in series;
• a third resistor connected between the monitor node and a second node;
• a second resistance adjustment unit connected in parallel with the third resistor, the second resistance adjustment unit including a fourth resistor, a second switch, and a sixth resistor connected in series;
• a first comparator having an output terminal connected to a gate electrode of the first transistor and configured to compare a voltage of the monitor node to a reference voltage and output a control line voltage to a gate electrode of the first transistor according to the comparison;
• and
• a resistance control circuit configured to control a conductance of the first switch and a conductance of the second switch on the basis of an operation initiation signal.