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US 2014/0177342 A1Published application
Memory cell sensing using a boost voltage
AssigneeMicron Technology, Inc.
InventorsViolante Moschiano, Domenico Di Cicco, Andrea D'Alessandro
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Abstract
The present disclosure includes devices, methods, and systems including memory cell sensing using a boost voltage. One or more embodiments include pre-charging and/or floating a data line associated with a selected memory cell, boosting the pre-charged and/or floating data line, and determining a state of the selected memory cell based on a sensed discharge of the data line after boosting the data line.
Claims21
1-20. (canceled)
A device, comprising:
- an array of memory cells;
- and
- a controller configured to:
- pre-charge and/or float a data line associated with a selected memory cell of the array;
- apply a positive boost voltage to a source associated with the selected memory cell after the data line is pre-charged and/or floating;
- and
- determine a state of the selected memory cell based on a sensed discharge of the data line after applying the positive boost voltage to the source.
4 more elements
A device, comprising:
- an array of memory cells;
- and
- a controller configured to:
- pre-charge a data line associated with a selected memory cell of the array to a positive pre-charge voltage;
- float the pre-charged data line;
- apply a positive boost voltage to a source associated with the selected memory cell after floating the pre-charged data line;
- cause a discharge of the source after applying the positive boost voltage to the source;
- and
- determine a state of the selected memory cell based on a sensed discharge of the data line in response to the discharge of the source.
6 more elements
A device, comprising:
- an array of memory cells;
- and
- a controller configured to:
- pre-charge a data line associated with a selected memory cell of the array, wherein the selected memory cell has a negative threshold voltage;
- boost the pre-charged data line;
- and
- determine a state of the selected memory cell based on a sensed discharge of the data line responsive to boosting the pre-charged data line and without applying a negative voltage to the selected memory cell.
4 more elements
Dependencies are inferred from the claim text.