Three dimensional stacked nonvolatile semiconductor memory

A nonvolatile semiconductor memory comprising:

• a memory cell array included a first and second block;
• a first driver disposed adjacent to the memory cell array;
• wherein the first block has a first cell unit including a memory cell to be programmed and a second cell units without a memory cell to be programmed, and the first cell unit and the second cell units are connected to the bit line, and programming is executed to the memory cell to be programmed by applying a program potential or a transfer potential lower than the program potential to the word lines in the first block after an initial potential of channels of the memory cells in the first and second cell units is set to a plus potential, and
• wherein the program potential and the transfer potential are not applied to the word lines in the second block in the programming.