Non-volatile memory device and method of fabricating the same
AssigneeSK hynix Inc.
InventorYoung-Jun KWON
Life of this patent
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Abstract
This technology provides a non-volatile memory device and a method of manufacturing the same, which may prevent an over-erase phenomenon and also increase the degree of integration, In an aspect, the non-volatile memory device includes a select gate formed over a substrate, a plurality of floating gates laterally formed with respect to the select gate and spaced apart from each other, to be independently programmable, and a plurality of junctions formed in the substrate and arranged to be controllable by the respective floating gates.
Claims21
A non-volatile memory device, comprising:
- a select gate formed over a substrate;
- a plurality of floating gates laterally formed with respect to the select gate and spaced apart from each other, to be independently programmable;
- and
- a plurality of junctions formed in the substrate and arranged to be controllable by the respective floating gates.
A non-volatile memory device, comprising:
- a select gate formed over a substrate;
- a first floating gate formed on one of sidewalls of the select gate;
- a second floating gate formed on the other of the sidewalls of the select gate;
- a first junction formed in the substrate under the first floating gate;
- and
- a second junction formed in the substrate under the second floating gate,
- wherein the first floating gate and the second floating gate are independently programmable.
A non-volatile memory device, comprising:
- a substrate including a plurality of active regions;
- a plurality of word lines crossing the active regions;
- a plurality of junctions formed in the active region between the word lines;
- and
- a bit line and a source line connected to the respective junctions on one side and the other side of any one of the word lines,
- wherein the word line comprises a select gate crossing the active region and a plurality of floating gates formed on sidewalls of the select gate in such a way as to overlap with the active region and spaced apart from each other in such a way as to be independently programmed.
Dependencies are inferred from the claim text.