Nonconsecutive sensing of multilevel memory cells

An apparatus, comprising:

• an array of multilevel memory cells (MLCs);
• a sensing signal generator;
• and
• a controller coupled to the array and to the sensing signal generator and configured to:
• change a magnitude of an output of the sensing signal generator serially through each of a first subset of a plurality of sensing magnitudes to sense a first page of information from a number of MLCs in the array;
• and
• change the magnitude of the output of the sensing signal generator serially through each of a second subset of the plurality of sensing magnitudes to sense a second page of information from the number of MLCs in the array;
• wherein each of the plurality of sensing magnitudes corresponds to a respective charge storage state for the number of MLCs.

An apparatus, comprising:

• an array of multilevel memory cells (MLCs);
• and
• a controller coupled to the array and configured to:
• sense a first page of information from each of a number of the MLCs with a first number of sensing magnitudes by increasing a magnitude of a sensing signal through each of the first number of sensing magnitudes;
• and
• sense a second page of information from each of the number of the MLCs with a second number of sensing magnitudes, wherein the first number of sensing magnitudes include an order of sensing magnitudes that are nonconsecutive with respect to a plurality of consecutive charge storage states for the number of MLCs, and wherein the first number of sensing magnitudes and the second number of sensing magnitudes include, at most, one common sensing magnitude.