Row decoding circuit and memory
AssigneeGrace Semiconductor Manufacturing Corporation
InventorGuangjun Yang
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AssigneeGrace Semiconductor Manufacturing Corporation
InventorGuangjun Yang
Estimating the term…
A row decoding circuit and a memory are provided. The row decoding circuit is adapted for providing a word line operation voltage and a control-gate line operation voltage to a dual-bit split gate flash memory array, and includes a dummy row decoding unit, at least one row decoding unit and a driving voltage generating circuit. The dummy row decoding unit includes a first dummy control-gate line voltage output, a second dummy control-gate line voltage output and at least one dummy word line voltage output. The row decoding unit includes a first control-gate line voltage output, a second control-gate line voltage output and at least one word line voltage output. The driving voltage generating circuit is adapted for providing a third driving voltage to the first control-gate line voltage output and the second control-gate line voltage output.
A row decoding circuit adapted for providing a word line operation voltage and a control-gate line operation voltage to a dual-bit split gate flash memory array, comprising:
A memory comprising a dual-bit split gate flash memory array and a row decoding circuit adapted for providing a word line operation voltage and a control-gate line operation voltage to the dual-bit split gate flash memory array, wherein the row decoding circuit comprises a dummy row decoding unit, at least one row decoding unit and a driving voltage generating circuit,
Dependencies are inferred from the claim text.