Electric field enhanced spin transfer torque memory (sttm) device

A method of fabricating a spin torque transfer memory device, the method comprising:

• forming a vertically oriented magnetic tunneling junction (MTJ) element;
• depositing a dielectric layer over the MTJ element;
• depositing a conductive layer over the dielectric layer;
• etching back a first portion the dielectric layer to expose a metal layer contacting a first end of the MTJ element;
• etching back the conductive layer to expose a second end of the MTJ element;
• and
• forming a contact to the second end of the MTJ element.

A method of altering a logic state in a spin torque transfer memory device, the method comprising:

• inducing a current through a fixed magnetic layer, a tunneling layer, and a free magnetic layer disposed between the electrodes;
• inducing an electric field non-parallel to the direction of current between the first electrode and a field plate separated from the free magnetic layer by a dielectric layer adjacent to the free magnetic layer;
• and
• switching an orientation of magnetic dipoles in the free magnetic layer from a first orientation to a second orientation in response to the current and electric field.