Nonvolatile memory device and related operating method
AssigneeSamsung Electronics Co., Ltd.
InventorsHYUN-KOOK PARK, YOUNG-DON CHOI
Life of this patent
Estimating the term…
Abstract
A method is for driving a nonvolatile memory device, where the nonvolatile memory device includes a memory cell array composed of resistance memory cells. The method includes electrically connecting a clamping circuit, a line resistor and a selected one of the resistance memory cells in series between a sensing node and a ground. The method further includes adjusting at least one of a clamping voltage of the clamping circuit and a resistance of the line resistor according to a relative location of the selected one of the resistance memory cells within the memory cell array, and applying a read current to the sense node and sensing a voltage of the sense node to read a data stored in the selected one of the resistance memory cells.
Claims20
A method for driving a nonvolatile memory device, comprising:
- determining a read voltage of a nonvolatile memory cell, the read voltage being determined such that a resultant sensing margin is equal to or higher than a predetermined level;
- and
- adjusting at least one of clamping voltage and a line resistor connected to the nonvolatile memory cell so that the determined read voltage is applied to the nonvolatile memory cell when reading a data stored in the nonvolatile memory cell.
A method for driving a nonvolatile memory device, the nonvolatile memory device including a memory cell array composed of resistance memory cells, comprising:
- electrically connecting a clamping circuit, a line resistor and a selected one of the resistance memory cells in series between a sensing node and a ground;
- adjusting at least one of a clamping voltage of the clamping circuit and a resistance of the line resistor according to a relative location of the selected one of the resistance memory cells within the memory cell array;
- and
- applying a read current to the sense node and sensing a voltage of the sense node to read a data stored in the selected one of the resistance memory cells.
A nonvolatile memory device comprising:
- a resistance memory cell;
- a current source providing a compensation current to a first sensing node;
- a sense amplifier connected to the first sensing node to sense a level change of the first sensing node;
- a clamping unit connected between the resistance memory cell and the first sensing node to receive a control voltage and to output a clamping voltage;
- and
- a line resistor located between the clamping unit and the resistance memory cell and between the resistance memory cell and a ground terminal,
- wherein at least one of the clamping voltage and the line resistor is adjustable so that a read voltage is obtained that results in a sensing margin that is equal to or higher than a predetermined level when reading a data stored in the resistance memory cell.
Dependencies are inferred from the claim text.