Resistive memory device and write method thereof
AssigneeSK hynix Inc.
InventorKyu Sung KIM
Life of this patent
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Abstract
A method writes data in a resistive memory device in which paths for performing write operations to record first-state data and second-state data are controlled to cause current to flow in opposing directions in a resistive memory cell whose switching type has been determined. The method includes performing a write operation in a predetermined direction when writing the first-state data and second-state data, making a determination with respect to success in target data through verification, and attempting an additional write operation through a path reversed from a write path of corresponding data according to a result of the determination.
Claims20
A method of writing data in a resistive memory device, the method comprising:
- performing a write operation on a cell through one of first and second write paths to write target data of first-state data and second-state data;
- determining whether or not the target data is written in the cell through data verification;
- and
- performing an additional write operation on the cell through the other of the first and second write paths if it is determined that the target data is not written in the cell.
A method of writing data in a resistive memory device, the method comprising:
- performing a write operation to write target data of first-state data and second-state data in a cell through a corresponding one of first and second write paths,
- wherein the first-state data is written in the cell through the first write path, and the second-state data is written in the cell through the second write path that is opposite to the first write path;
- verifying whether or not the target data is written in the cell to determine whether or not a characteristic of the cell is reversed, wherein if the target data is not written in the cell, the characteristic is reversed;
- and
- performing an additional write operation on the cell through the other one of the first and second write paths according to a sensed result.
A resistive memory device, comprising:
- a first write driver configured to drive a first write path to write first-state data in a cell;
- and
- a second write driver configured to drive a second write path to write second-state data in the cell,
- wherein the second write driver is controlled to apply current to the cell through the second write path in an additional write operation, when it is determined in a verification operation of the cell that the first-state data has not been written in the cell in an original write operation, and
- wherein the first write driver is controlled to apply current to the cell through the first write path in the additional write operation, when it is determined in the verification operation of the cell that the second-state data has not been written in the cell in the original write operation.
Dependencies are inferred from the claim text.