Nonvolatile memory apparatus
AssigneeSK hynix Inc.
InventorChulhyun PARK
Life of this patent
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Abstract
A nonvolatile memory apparatus includes a sensing voltage generation unit, a memory cell, a current copy unit and a data sensing unit. The sensing voltage generation unit provides a sensing voltage with a constant level, to a sensing node. The memory cell receives the sensing voltage from the sensing node. The current copy unit generates copied current with substantially the same magnitude as sensing current which flows through the memory cell. The data sensing unit senses the copied current and generates a multi-bit data output signal.
Claims39
A nonvolatile memory apparatus comprising:
- a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node;
- a memory cell configured to receive the sensing voltage from the sensing node;
- a current copy unit configured to generate copied current with substantially the same magnitude as sensing current which flows through the memory cell;
- and
- a data sensing unit configured to sense the copied current and generate a multi-bit data output signal.
A nonvolatile memory apparatus comprising:
- a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node;
- a memory cell connected with the sensing node at one end thereof and configured to receive the sensing voltage;
- and
- a data sensing unit connected with the other end of the memory cell and configured to sense sensing current which flows through the memory cell and generate a data output signal.
A nonvolatile memory apparatus comprising:
- a memory cell;
- a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node;
- a column switch configured to connect one end of the memory cell with a sensing node in response to a bit line select signal;
- and
- a data sensing unit configured to receive and sense sensing current which flows through the memory cell, from the other end of the memory cell in response to a word line select signal, and generate a data output signal.
A nonvolatile memory apparatus comprising:
- a memory cell array including a plurality of memory cells having one ends which are respectively connected with a plurality of bit lines and other ends which are respectively connected with a plurality of word lines;
- a sensing voltage generation block configured to provide a sensing voltage to the memory cell array;
- and
- a data sensing block disposed at a position different from the sensing voltage generation block, and configured to receive and sense sensing current which flows through the memory cells and generate a data output signal.
A nonvolatile memory apparatus comprising:
- a memory cell array including memory cells one ends of which are respectively connected with a plurality of bit lines;
- a sensing voltage generation block configured to provide a sensing voltage to the memory cell array;
- and
- a data sensing block disposed below the memory cell array in a vertical direction, connected with the other ends of the memory cells, and configured to sense current which flows through the memory cells and generate a data output signal.
A nonvolatile memory apparatus comprising:
- a sensing voltage generation unit configured to provide a sensing voltage, to a sensing node;
- a memory cell configured to receive the sensing voltage from the sensing node;
- a current copy unit configured to generate copied current;
- and
- a data sensing unit configured to sense the copied current and generate a data output signal.
A memory system comprising:
- a memory controller;
- and
- a nonvolatile memory device including a nonvolatile memory apparatus comprising:
- a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node;
- a memory cell configured to receive the sensing voltage from the sensing node;
- a current copy unit configured to generate copied current with substantially the same magnitude as sensing current which flows through the memory cell;
- and
- a data sensing unit configured to sense the copied current and generate a data output signal.
An electronic device including a nonvolatile memory apparatus and a central processing unit, the nonvolatile memory apparatus comprising:
- a sensing voltage generation unit configured to provide a sensing voltage with a constant level, to a sensing node;
- is a memory cell configured to receive the sensing voltage from the sensing node;
- a current copy unit configured to generate copied current with substantially the same magnitude as sensing current which flows through the memory cell;
- and
- a data sensing unit configured to sense the copied current and generate a data output signal.
Dependencies are inferred from the claim text.