Hybrid Memory
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Wei Ting, Chun-Yang Tsai, Kuo-Ching Huang
Life of this patent
Estimating the term…
Abstract
A two-switch hybrid memory cell device includes a storage node connected between one terminal of a first switch and a gate of a second switch. The device also includes a resistive switching device connected to the storage node. The resistive switching device is to act as a capacitance by being set to a high resistive state when the memory cell is in a dynamic mode.
Claims20
A two-switch hybrid memory cell device comprising:
- a storage node connected between one terminal of a first switch and a gate of a second switch;
- and
- a resistive switching device connected to the storage node;
- wherein the resistive switching device is to act as a capacitance by being set to a high resistive state when the memory cell is in a dynamic mode.
A method for operating a two-switch hybrid memory cell, the method comprising:
- applying a signal to a bit line connected to one terminal of a first switch, a second terminal of the first switch being connected to a first terminal of a resistive switching device and a gate terminal of a second switch;
- and
- while in a dynamic mode, storing data in a capacitance of the resistive switching device while the resistive switching device is in a high resistive state.
A hybrid memory system comprising a number of two-switch cells, each cell comprising:
- a write switch comprising:
- a first terminal connected to a write bit line;
- a second terminal connected to a storage node;
- and
- a gate connected to a write word line;
- and
- a read switch comprising:
- a gate connected to the storage node;
- a first terminal connected to a read word line;
- and
- a second terminal connected to a read bit line;
- and
- a resistive switching device comprising:
- a first terminal connected to the storage node;
- and
- a second terminal connected to a select line;
- wherein a capacitance of the resistive switching device while in a high resistive state is to store data while the memory cell is in a dynamic mode and a resistive state of the resistive switching device is used to store data while the memory cell is in a non-volatile mode.
Dependencies are inferred from the claim text.