Non-volatile memory system with power reduction mechanism and method of operation thereof
AssigneeSony Corporation
InventorsMakoto Kitagawa, Tomohito Tsushima, Takafumi Kunihiro, Jun Sumino, Wataru Otsuka
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Abstract
A method of operation of a non-volatile memory system including: providing a resistive storage element having a transformation layer; activating a write driver, coupled to the resistive storage element, for applying a bias voltage to the transformation layer; monitoring a resistance of the resistive storage element by a sense amplifier; and detecting a conductive thread, formed in the transformation layer, by the sense amplifier for reducing a level of the bias voltage.
Claims20
A method of operation of a non-volatile memory system comprising:
- providing a resistive storage element having a transformation layer;
- activating a write driver, coupled to the resistive storage element, for applying a bias voltage to the transformation layer;
- monitoring a resistance of the resistive storage element by a sense amplifier;
- and
- detecting a conductive thread, formed in the transformation layer, by the sense amplifier for reducing a level of the bias voltage.
A method of operation of a non-volatile memory system comprising:
- providing a resistive storage element having a transformation layer including forming a conductive layer directly on the transformation layer;
- activating a write driver, coupled to the resistive storage element, for applying a bias voltage to the transformation layer including modulating a bit line and control bus for protecting the transformation layer;
- monitoring a resistance of the resistive storage element by a sense amplifier including sampling an analog multiplexer for determining the resistance;
- and
- detecting a conductive thread, formed in the transformation layer, by the sense amplifier for reducing a level of the bias voltage including reducing a power consumption by up to 30%.
A non-volatile memory system comprising:
- a resistive storage element having a transformation layer;
- a write driver, coupled to the resistive storage element, for applying a bias voltage to the transformation layer;
- a sense amplifier for monitoring a resistance of the resistive storage element;
- and
- a conductive thread, formed in the transformation layer, detected by the sense amplifier for reducing a level of the bias voltage.
Dependencies are inferred from the claim text.