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AssigneesIntermolecular, Inc., SanDisk 3D LLC, Kabushiki Kaisha Toshiba
InventorsDipankar Pramanik, David E. Lazovsky, Tim Minvielle, Takeshi Yamaguchi
Estimating the term…
A resistor array for multi-bit data storage without the need to increase the size of a memory chip or scale down the feature size of a memory cell contained within the memory chip is provided. The resistor array incorporates a number of discrete resistive elements to be selectively connected, in different series combinations, to at least one memory cell or memory device. In one configuration, by connecting each memory cell or device with at least one resistor array, a resistive switching layer found in the resistive switching memory element of the connected memory device is capable of being at multiple resistance states for storing multiple bits of digital information. During device programming operations, when a desired series combination of the resistive elements within the resistor array is selected, the resistive switching layer in the connected memory device can be in a desired resistance state.
A memory device comprising:
A method of forming a resistive switching memory device, the method comprising:
A method of storing N bits of data in a resistive switching memory device, the method comprising:
Dependencies are inferred from the claim text.