US 2014/0176771 A1Published application

Solid-state imaging device and digital camera

AssigneeFUJIFILM Corporation

InventorRyousuke ITOU

Life of this patent

Estimating the term…

Loading patent…

Abstract

A solid-state imaging device comprises first pixels and second pixels. The first pixel has a first PD and a first photoelectric conversion film. The second pixel has a second PD and a second photoelectric conversion film. The first PD and the second PD are formed in a surface layer of a semiconductor substrate. The first photoelectric conversion film is formed over the first PD, in a position shifted in a rightward direction relative to the center of the first PD. The second photoelectric conversion film is formed over the second PD, in a position shifted in a leftward direction relative to the center of the second PD. The first photoelectric conversion film photoelectrically converts incident light incident on a right area of the first PD. The second photoelectric conversion film photoelectrically converts incident light incident on a left area of the second PD.

Claims11

Dependent claims

A solid-state imaging device comprising:

a plurality of first pixels each having a first photoelectric converter and a first photoelectric conversion film, the first photoelectric converter and the first photoelectric conversion film photoelectrically converting incident light, the first photoelectric conversion film being shifted in a first direction relative to the first photoelectric converter;
and
a plurality of second pixels each having a second photoelectric converter and a second photoelectric conversion film, the second photoelectric converter and the second photoelectric conversion film photoelectrically converting incident light, the second photoelectric conversion film being shifted in a second direction relative to the second photoelectric converter, the second direction being opposite to the first direction;
wherein the first photoelectric conversion film partially covers an incident side of the first photoelectric converter and the second photoelectric conversion film partially covers an incident side of the second photoelectric converter, and the first photoelectric converter is located at the center of the first pixel and the second photoelectric converter is located at the center of the second pixel.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 14/191,877Filed 27 Feb 2014
Priority: JP 2011-18725530 Aug 2011
Published: 26 Jun 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H04N 25/76
SSIS architectures; Circuits associated therewith: addressed sensors, e.g. MOS or CMOS sensors
H10F 39/80
Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors…:…
H04N 23/672
Focus control based on electronic image sensor signals: based on the phase difference signals
H04N 25/704
SSIS architectures incorporating pixels for producing signals other than image signals: pixels specially adapted for focusing, e.g. phase…