Graphene multiple-valued logic device, operation method thereof, and fabrication method thereof

A method of operating a graphene multiple-valued logic device comprising:

• providing a graphene multiple-valued logic device, the graphene multiple-valued logic device comprising:
• a substrate;
• a graphene channel layer disposed on the substrate;
• source and drain electrodes disposed at both ends of the graphene channel layer, respectively;
• an insulator film formed on the graphene channel layer on which the source and drain electrodes are disposed;
• and first and second gate electrodes disposed on the insulator film with a predetermined gap defined therebetween;
• determining a conduction type of the graphene channel layer by applying a ground voltage to the graphene channel layer disposed between the first and second gate electrodes;
• forming a conduction type of the graphene channel layer facing the first gate electrode by applying a positive or negative gate voltage to the first gate electrode with reference to the ground voltage;
• forming a conduction type of the graphene channel layer facing the second gate electrode by applying a positive or negative gate voltage to the second gate electrode with reference to the ground voltage;
• and
• calculating total resistance of the graphene channel layer varying with voltage applied to the first and second gate electrodes.

A method of fabricating a graphene multiple-valued logic device comprising:

• forming a graphene channel layer on a substrate;
• forming source and drain electrodes at both ends of the graphene channel, respectively;
• forming an insulator film on the graphene channel layer on which the source and drain electrodes are formed;
• and
• forming at least two gate electrodes on the insulator film.