Semiconductor devices comprising interconnect structures and methods of fabrication
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Nishant Sinha, John A. Smythe
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Abstract
Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material.
Claims20
A semiconductor device, comprising:
- at least one integrated circuit in communication with at least one conductive trace disposed on an insulative material;
- at least one interconnect structure extending through the at least one conductive trace and through the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace that differs from a transverse cross-sectional dimension through the insulative material;
- and
- a silicide material between the at least one conductive trace and the at least one interconnect structure.
A semiconductor device, comprising:
- a conductive trace adjacent to an insulative material;
- and
- an interconnect structure comprising:
- a portion of at least one conductive material comprising a sidewall traversing the insulative material;
- and
- another portion of the at least one conductive material comprising another sidewall traversing a contact end of the conductive trace, a silicide disposed on the contact end of the conductive trace,
- the another sidewall offset from the sidewall.
A method of forming a semiconductor device, comprising:
- forming an aperture through an insulative material and through a conductive trace adjacent to the insulative material;
- removing material from one of the insulative material and the conductive trace to form a partially-expanded aperture and to form a surface of the insulative material offset from a contact end of the conductive trace, the surface of the insulative material and the contact end of the conductive trace exposed in the partially-expanded aperture;
- forming a silicide on the contact end of the conductive trace exposed in the partially-expanded aperture;
- and
- filling the partially-expanded aperture with at least one conductive material to form an interconnect structure comprising:
- a portion of the at least one conductive material comprising a sidewall traversing the surface of the insulative material;
- and
- another portion of the at least one conductive material comprising another sidewall traversing the contact end of the conductive trace, the another sidewall offset from the sidewall.
Dependencies are inferred from the claim text.