Landing structure for through-silicon via

A method comprising:

• providing a semiconductor substrate having a first surface and a second surface opposite to the first surface;
• forming a device layer on the first surface of the semiconductor substrate, the device layer including one or more transistor devices;
• forming interconnect layers on the device layer including first interconnect structures that are configured to route electrical signals to the one or more transistor devices and second interconnect structures that are configured to provide one or more landing structures for one or more corresponding through-silicon vias (TSVs);
• and
• forming one or more through-silicon vias (TSVs) between the first surface and the second surface, wherein the second interconnect structures are electrically coupled with the one or more TSVs.

A system comprising:

• a first die including:
• a semiconductor substrate having a first surface and a second surface opposite to the first surface;
• a device layer disposed on the first surface of the semiconductor substrate, the device layer including one or more transistor devices;
• interconnect layers disposed on the device layer, the interconnect layers including a plurality of interconnect structures;
• and
• one or more through-silicon vias (TSVs) disposed between the first surface and the second surface, wherein the plurality of interconnect structures include
• first interconnect structures that are configured to route electrical signals to the one or more transistor devices, and
• second interconnect structures that are electrically coupled with the one or more TSVs and configured to provide one or more corresponding landing structures for the one or more TSVs;
• and
• a second die electrically coupled with the first die through the one or more TSVs.