Copper wire bonding structure in semiconductor device and fabrication method thereof

A fabrication method for a semiconductor device comprising the steps of:

• a) forming a plurality of dice on a wafer, wherein a plurality of top electrodes separated from each other are formed at a front surface of each die, and at least a first plating layer and a second plating layer are formed on each top electrode with the second plating layer overlaying the first plating layer;
• the top electrodes of each die comprise at least a first top electrode and a second top electrode;
• b) forming a plurality of Au stud bumps on the wafer, wherein each Au stud bump is correspondingly formed on the second plating layer on the first top electrode of each die;
• c) singulating individual die by cutting the wafer;
• d) attaching a back surface of the die on a die paddle of a lead frame by a first solder layer;
• e) connecting a copper clip on the second plating layer of the second top electrode of the die by a second solder layer;
• f) performing reflow soldering then cleaning the surface of the die;
• g) connecting a copper wire to the Au stud bump of the first top electrode of the die;
• and
• h) packaging the die to form individual semiconductor device.