Oxygen-containing ceramic hard masks and associated wet-cleans
AssigneeLam Research Corporation
InventorsGeorge Andrew Antonelli, Alice Hollister, Sirish Reddy
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Abstract
A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.
Claims20
A method of forming a hard mask film on a semiconductor substrate, the method comprising:
- receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber;
- and
- forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch.
A partially fabricated semiconductor device, comprising:
- a semiconductor device substrate;
- and
- an oxygen-containing ceramic hard mask film disposed on the substrate, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch.
An apparatus for processing a hard mask film on a semiconductor substrate, the apparatus comprising:
- a plasma-enhanced chemical vapor deposition (PECVD) process chamber;
- a support in the process chamber for a semiconductor wafer substrate for holding the wafer substrate in position during hard mask deposition;
- and
- a controller comprising program instructions for a process of:
- receiving a semiconductor wafer substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber;
- and
- forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch.
Dependencies are inferred from the claim text.