Composite of III-Nitride Crystal on Laterally Stacked Substrates
AssigneeSumitomo Electric Industries, Ltd.
InventorsNaho Mizuhara, Koji Uematsu, Michimasa Miyanaga, Keisuke Tanizaki, Hideaki Nakahata, Seiji Nakahata, Takuji Okahisa
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Abstract
Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.
Claims3
A Group-III nitride crystal composite, comprising:
- a plurality of bulk III-nitride crystal slices, each with a major surface of crystallographic plane orientation being one selected from the group consisting of (1-102), (1-10-2), (11-22), (11-2-2), (20-21), (20-2-1), (22-41) and (22-4-1), disposed adjoining each other with the major-surface side of each facing up;
- and
- a III-nitride crystal epitaxially present on the major surfaces of the plurality of III-nitride crystal slices, said III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.
Dependencies are inferred from the claim text.