Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsYoichi Nogami, Yoshitsugu Yamamoto, Yoshinori Yokoyama, Shinnosuke Soda
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Abstract
A method for manufacturing a semiconductor device includes: forming a semiconductor element on a main surface of a substrate; forming a low melting glass film having a melting point of 450° C. or less on the main surface and the semiconductor element; heat treating the substrate while pressing the low melting glass film toward the main surface of the substrate with a pressurizing jig that is insulating or semi-insulating, and sintering the low melting glass film; and leaving the pressurizing jig on the low melting glass film after sintering the low melting glass film.
Claims6
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor element on a main surface of a substrate;
- forming a low melting glass film having a melting point of 450° C. or less on the main surface and the semiconductor element;
- heat treating the substrate while pressing the low melting glass film toward the main surface of the substrates with a pressurizing jig that is insulating or semi-insulating, and sintering the low melting glass film;
- and
- leaving the pressurizing jig on the low melting glass film after sintering the low melting glass film.
A semiconductor device comprising:
- a substrate having a main surface;
- a semiconductor element on the main surface;
- a low melting glass film having a melting point of 450° C. or less on the main surface and on the semiconductor element;
- and
- a pressurizing jig that is insulating or semi-insulating disposed on the low melting glass film.
Dependencies are inferred from the claim text.